<?xml version="1.0" encoding="UTF-8"?>
<dataset name="transistor_density_by_process_node" title="Transistor density by semiconductor process node" source="https://aidb.si/d/transistor-density-by-process-node">
  <row>
    <id>1960-bell-labs-20-000-nm-pmos</id>
    <year>1960</year>
    <process>20,000 nm</process>
    <process_nm>20000</process_nm>
    <mosfet_type>PMOS</mosfet_type>
    <manufacturer>Bell Labs</manufacturer>
  </row>
  <row>
    <id>1960-bell-labs-20-000-nm-nmos</id>
    <year>1960</year>
    <process>20,000 nm</process>
    <process_nm>20000</process_nm>
    <mosfet_type>NMOS</mosfet_type>
    <manufacturer>Bell Labs</manufacturer>
  </row>
  <row>
    <id>1963-fairchild-unknown-cmos</id>
    <year>1963</year>
    <mosfet_type>CMOS</mosfet_type>
    <manufacturer>Fairchild</manufacturer>
  </row>
  <row>
    <id>1964-general-microelectronics-unknown-pmos</id>
    <year>1964</year>
    <mosfet_type>PMOS</mosfet_type>
    <manufacturer>General Microelectronics</manufacturer>
  </row>
  <row>
    <id>1968-rca-20-000-nm-cmos</id>
    <year>1968</year>
    <process>20,000 nm</process>
    <process_nm>20000</process_nm>
    <mosfet_type>CMOS</mosfet_type>
    <manufacturer>RCA</manufacturer>
  </row>
  <row>
    <id>1969-intel-12-000-nm-pmos</id>
    <year>1969</year>
    <process>12,000 nm</process>
    <process_nm>12000</process_nm>
    <mosfet_type>PMOS</mosfet_type>
    <manufacturer>Intel</manufacturer>
  </row>
  <row>
    <id>1970-rca-10-000-nm-cmos</id>
    <year>1970</year>
    <process>10,000 nm</process>
    <process_nm>10000</process_nm>
    <mosfet_type>CMOS</mosfet_type>
    <manufacturer>RCA</manufacturer>
  </row>
  <row>
    <id>1970-intel-8-000-nm-pmos</id>
    <year>1970</year>
    <process>8,000 nm</process>
    <process_nm>8000</process_nm>
    <mosfet_type>PMOS</mosfet_type>
    <manufacturer>Intel</manufacturer>
    <density_per_mm2>300</density_per_mm2>
    <density_high_per_mm2>300</density_high_per_mm2>
  </row>
  <row>
    <id>1971-intel-10-000-nm-pmos</id>
    <year>1971</year>
    <process>10,000 nm</process>
    <process_nm>10000</process_nm>
    <mosfet_type>PMOS</mosfet_type>
    <manufacturer>Intel</manufacturer>
  </row>
  <row>
    <id>1971-general-instrument-unknown-pmos</id>
    <year>1971</year>
    <mosfet_type>PMOS</mosfet_type>
    <manufacturer>General Instrument</manufacturer>
    <density_per_mm2>480</density_per_mm2>
    <density_high_per_mm2>480</density_high_per_mm2>
  </row>
  <row>
    <id>1973-texas-instruments-unknown-nmos</id>
    <year>1973</year>
    <mosfet_type>NMOS</mosfet_type>
    <manufacturer>Texas Instruments</manufacturer>
  </row>
  <row>
    <id>1973-mostek-unknown-nmos</id>
    <year>1973</year>
    <mosfet_type>NMOS</mosfet_type>
    <manufacturer>Mostek</manufacturer>
    <density_per_mm2>220</density_per_mm2>
    <density_high_per_mm2>220</density_high_per_mm2>
  </row>
  <row>
    <id>1973-nec-7-500-nm-nmos</id>
    <year>1973</year>
    <process>7,500 nm</process>
    <process_nm>7500</process_nm>
    <mosfet_type>NMOS</mosfet_type>
    <manufacturer>NEC</manufacturer>
  </row>
  <row>
    <id>1973-toshiba-6-000-nm-pmos</id>
    <year>1973</year>
    <process>6,000 nm</process>
    <process_nm>6000</process_nm>
    <mosfet_type>PMOS</mosfet_type>
    <manufacturer>Toshiba</manufacturer>
  </row>
  <row>
    <id>1976-hitachi-intel-5-000-nm-nmos</id>
    <year>1976</year>
    <process>5,000 nm</process>
    <process_nm>5000</process_nm>
    <mosfet_type>NMOS</mosfet_type>
    <manufacturer>Hitachi, Intel</manufacturer>
  </row>
  <row>
    <id>1976-rca-5-000-nm-cmos</id>
    <year>1976</year>
    <process>5,000 nm</process>
    <process_nm>5000</process_nm>
    <mosfet_type>CMOS</mosfet_type>
    <manufacturer>RCA</manufacturer>
  </row>
  <row>
    <id>1976-zilog-4-000-nm-nmos</id>
    <year>1976</year>
    <process>4,000 nm</process>
    <process_nm>4000</process_nm>
    <mosfet_type>NMOS</mosfet_type>
    <manufacturer>Zilog</manufacturer>
  </row>
  <row>
    <id>1976-intel-3-000-nm-nmos</id>
    <year>1976</year>
    <process>3,000 nm</process>
    <process_nm>3000</process_nm>
    <mosfet_type>NMOS</mosfet_type>
    <manufacturer>Intel</manufacturer>
  </row>
  <row>
    <id>1977-ntt-unknown-nmos</id>
    <year>1977</year>
    <mosfet_type>NMOS</mosfet_type>
    <manufacturer>NTT</manufacturer>
    <density_per_mm2>1850</density_per_mm2>
    <density_high_per_mm2>1850</density_high_per_mm2>
  </row>
  <row>
    <id>1978-hitachi-3-000-nm-cmos</id>
    <year>1978</year>
    <process>3,000 nm</process>
    <process_nm>3000</process_nm>
    <mosfet_type>CMOS</mosfet_type>
    <manufacturer>Hitachi</manufacturer>
  </row>
  <row>
    <id>1978-texas-instruments-2-500-nm-nmos</id>
    <year>1978</year>
    <process>2,500 nm</process>
    <process_nm>2500</process_nm>
    <mosfet_type>NMOS</mosfet_type>
    <manufacturer>Texas Instruments</manufacturer>
  </row>
  <row>
    <id>1978-nec-ntt-2-000-nm-nmos</id>
    <year>1978</year>
    <process>2,000 nm</process>
    <process_nm>2000</process_nm>
    <mosfet_type>NMOS</mosfet_type>
    <manufacturer>NEC, NTT</manufacturer>
  </row>
  <row>
    <id>1979-siemens-unknown-vmos</id>
    <year>1979</year>
    <mosfet_type>VMOS</mosfet_type>
    <manufacturer>Siemens</manufacturer>
    <density_per_mm2>2600</density_per_mm2>
    <density_high_per_mm2>2600</density_high_per_mm2>
  </row>
  <row>
    <id>1979-ntt-1-000-nm-nmos</id>
    <year>1979</year>
    <process>1,000 nm</process>
    <process_nm>1000</process_nm>
    <mosfet_type>NMOS</mosfet_type>
    <manufacturer>NTT</manufacturer>
    <density_per_mm2>7280</density_per_mm2>
    <density_high_per_mm2>7280</density_high_per_mm2>
  </row>
  <row>
    <id>1980-ntt-1-000-nm-nmos</id>
    <year>1980</year>
    <process>1,000 nm</process>
    <process_nm>1000</process_nm>
    <mosfet_type>NMOS</mosfet_type>
    <manufacturer>NTT</manufacturer>
    <density_per_mm2>7620</density_per_mm2>
    <density_high_per_mm2>7620</density_high_per_mm2>
  </row>
  <row>
    <id>1983-toshiba-2-000-nm-cmos</id>
    <year>1983</year>
    <process>2,000 nm</process>
    <process_nm>2000</process_nm>
    <mosfet_type>CMOS</mosfet_type>
    <manufacturer>Toshiba</manufacturer>
  </row>
  <row>
    <id>1983-intel-1-500-nm-cmos</id>
    <year>1983</year>
    <process>1,500 nm</process>
    <process_nm>1500</process_nm>
    <mosfet_type>CMOS</mosfet_type>
    <manufacturer>Intel</manufacturer>
  </row>
  <row>
    <id>1983-intel-1-200-nm-cmos</id>
    <year>1983</year>
    <process>1,200 nm</process>
    <process_nm>1200</process_nm>
    <mosfet_type>CMOS</mosfet_type>
    <manufacturer>Intel</manufacturer>
  </row>
  <row>
    <id>1984-ntt-800-nm-cmos</id>
    <year>1984</year>
    <process>800 nm</process>
    <process_nm>800</process_nm>
    <mosfet_type>CMOS</mosfet_type>
    <manufacturer>NTT</manufacturer>
  </row>
  <row>
    <id>1987-fujitsu-700-nm-cmos</id>
    <year>1987</year>
    <process>700 nm</process>
    <process_nm>700</process_nm>
    <mosfet_type>CMOS</mosfet_type>
    <manufacturer>Fujitsu</manufacturer>
  </row>
  <row>
    <id>1989-mitsubishi-nec-toshiba-600-nm-cmos</id>
    <year>1989</year>
    <process>600 nm</process>
    <process_nm>600</process_nm>
    <mosfet_type>CMOS</mosfet_type>
    <manufacturer>Mitsubishi, NEC, Toshiba</manufacturer>
  </row>
  <row>
    <id>1989-hitachi-mitsubishi-nec-toshiba-500-nm-cmos</id>
    <year>1989</year>
    <process>500 nm</process>
    <process_nm>500</process_nm>
    <mosfet_type>CMOS</mosfet_type>
    <manufacturer>Hitachi, Mitsubishi, NEC, Toshiba</manufacturer>
  </row>
  <row>
    <id>1991-matsushita-mitsubishi-fujitsu-toshiba-400-nm-cmos</id>
    <year>1991</year>
    <process>400 nm</process>
    <process_nm>400</process_nm>
    <mosfet_type>CMOS</mosfet_type>
    <manufacturer>Matsushita, Mitsubishi, Fujitsu, Toshiba</manufacturer>
  </row>
  <row>
    <id>1993-sony-350-nm-cmos</id>
    <year>1993</year>
    <process>350 nm</process>
    <process_nm>350</process_nm>
    <mosfet_type>CMOS</mosfet_type>
    <manufacturer>Sony</manufacturer>
  </row>
  <row>
    <id>1993-hitachi-nec-250-nm-cmos</id>
    <year>1993</year>
    <process>250 nm</process>
    <process_nm>250</process_nm>
    <mosfet_type>CMOS</mosfet_type>
    <manufacturer>Hitachi, NEC</manufacturer>
  </row>
  <row>
    <id>1994-nec-350-nm-cmos</id>
    <node>3LM</node>
    <year>1994</year>
    <process>350 nm</process>
    <process_nm>350</process_nm>
    <mosfet_type>CMOS</mosfet_type>
    <manufacturer>NEC</manufacturer>
    <density_per_mm2>32000</density_per_mm2>
    <density_high_per_mm2>32000</density_high_per_mm2>
  </row>
  <row>
    <id>1995-hitachi-160-nm-cmos</id>
    <year>1995</year>
    <process>160 nm</process>
    <process_nm>160</process_nm>
    <mosfet_type>CMOS</mosfet_type>
    <manufacturer>Hitachi</manufacturer>
  </row>
  <row>
    <id>1996-mitsubishi-150-nm-cmos</id>
    <year>1996</year>
    <process>150 nm</process>
    <process_nm>150</process_nm>
    <mosfet_type>CMOS</mosfet_type>
    <manufacturer>Mitsubishi</manufacturer>
  </row>
  <row>
    <id>1998-tsmc-180-nm-cmos</id>
    <node>TSMC 180 nm</node>
    <year>1998</year>
    <process>180 nm</process>
    <process_nm>180</process_nm>
    <mosfet_type>CMOS</mosfet_type>
    <manufacturer>TSMC</manufacturer>
  </row>
  <row>
    <id>1999-fujitsu-180-nm-cmos</id>
    <node>CS80</node>
    <year>1999</year>
    <process>180 nm</process>
    <process_nm>180</process_nm>
    <mosfet_type>CMOS</mosfet_type>
    <manufacturer>Fujitsu</manufacturer>
  </row>
  <row>
    <id>1999-intel-sony-toshiba-180-nm-cmos</id>
    <year>1999</year>
    <process>180 nm</process>
    <process_nm>180</process_nm>
    <mosfet_type>CMOS</mosfet_type>
    <manufacturer>Intel, Sony, Toshiba</manufacturer>
  </row>
  <row>
    <id>1999-fujitsu-170-nm-cmos</id>
    <node>CS85</node>
    <year>1999</year>
    <process>170 nm</process>
    <process_nm>170</process_nm>
    <mosfet_type>CMOS</mosfet_type>
    <manufacturer>Fujitsu</manufacturer>
  </row>
  <row>
    <id>1999-samsung-140-nm-cmos</id>
    <node>Samsung 140 nm</node>
    <year>1999</year>
    <process>140 nm</process>
    <process_nm>140</process_nm>
    <mosfet_type>CMOS</mosfet_type>
    <manufacturer>Samsung</manufacturer>
  </row>
  <row>
    <id>2001-fujitsu-intel-130-nm-cmos</id>
    <year>2001</year>
    <process>130 nm</process>
    <process_nm>130</process_nm>
    <mosfet_type>CMOS</mosfet_type>
    <manufacturer>Fujitsu, Intel</manufacturer>
  </row>
  <row>
    <id>2001-samsung-100-nm-cmos</id>
    <node>Samsung 100 nm</node>
    <year>2001</year>
    <process>100 nm</process>
    <process_nm>100</process_nm>
    <mosfet_type>CMOS</mosfet_type>
    <manufacturer>Samsung</manufacturer>
  </row>
  <row>
    <id>2002-sony-toshiba-samsung-90-nm-cmos</id>
    <year>2002</year>
    <process>90 nm</process>
    <process_nm>90</process_nm>
    <mosfet_type>CMOS</mosfet_type>
    <manufacturer>Sony, Toshiba, Samsung</manufacturer>
  </row>
  <row>
    <id>2003-fujitsu-90-nm-cmos</id>
    <node>CS100</node>
    <year>2003</year>
    <process>90 nm</process>
    <process_nm>90</process_nm>
    <mosfet_type>CMOS</mosfet_type>
    <manufacturer>Fujitsu</manufacturer>
  </row>
  <row>
    <id>2004-intel-90-nm-cmos</id>
    <node>Intel 90 nm</node>
    <year>2004</year>
    <process>90 nm</process>
    <process_nm>90</process_nm>
    <mosfet_type>CMOS</mosfet_type>
    <manufacturer>Intel</manufacturer>
    <density_per_mm2>1450000</density_per_mm2>
    <density_high_per_mm2>1450000</density_high_per_mm2>
  </row>
  <row>
    <id>2004-samsung-80-nm-cmos</id>
    <node>Samsung 80 nm</node>
    <year>2004</year>
    <process>80 nm</process>
    <process_nm>80</process_nm>
    <mosfet_type>CMOS</mosfet_type>
    <manufacturer>Samsung</manufacturer>
  </row>
  <row>
    <id>2004-fujitsu-toshiba-65-nm-cmos</id>
    <year>2004</year>
    <process>65 nm</process>
    <process_nm>65</process_nm>
    <mosfet_type>CMOS</mosfet_type>
    <manufacturer>Fujitsu, Toshiba</manufacturer>
  </row>
  <row>
    <id>2004-samsung-60-nm-cmos</id>
    <node>Samsung 60 nm</node>
    <year>2004</year>
    <process>60 nm</process>
    <process_nm>60</process_nm>
    <mosfet_type>CMOS</mosfet_type>
    <manufacturer>Samsung</manufacturer>
  </row>
  <row>
    <id>2004-tsmc-45-nm-cmos</id>
    <node>TSMC 45 nm</node>
    <year>2004</year>
    <process>45 nm</process>
    <process_nm>45</process_nm>
    <mosfet_type>CMOS</mosfet_type>
    <manufacturer>TSMC</manufacturer>
  </row>
  <row>
    <id>2005-elpida-memory-90-nm-cmos</id>
    <node>Elpida 90 nm</node>
    <year>2005</year>
    <process>90 nm</process>
    <process_nm>90</process_nm>
    <mosfet_type>CMOS</mosfet_type>
    <manufacturer>Elpida Memory</manufacturer>
  </row>
  <row>
    <id>2005-fujitsu-65-nm-cmos</id>
    <node>CS200</node>
    <year>2005</year>
    <process>65 nm</process>
    <process_nm>65</process_nm>
    <mosfet_type>CMOS</mosfet_type>
    <manufacturer>Fujitsu</manufacturer>
  </row>
  <row>
    <id>2005-samsung-50-nm-cmos</id>
    <node>Samsung 50 nm</node>
    <year>2005</year>
    <process>50 nm</process>
    <process_nm>50</process_nm>
    <mosfet_type>CMOS</mosfet_type>
    <manufacturer>Samsung</manufacturer>
  </row>
  <row>
    <id>2006-intel-65-nm-cmos</id>
    <node>Intel 65 nm</node>
    <year>2006</year>
    <process>65 nm</process>
    <process_nm>65</process_nm>
    <mosfet_type>CMOS</mosfet_type>
    <manufacturer>Intel</manufacturer>
    <density_per_mm2>2080000</density_per_mm2>
    <density_high_per_mm2>2080000</density_high_per_mm2>
  </row>
  <row>
    <id>2006-samsung-40-nm-cmos</id>
    <node>Samsung 40 nm</node>
    <year>2006</year>
    <process>40 nm</process>
    <process_nm>40</process_nm>
    <mosfet_type>CMOS</mosfet_type>
    <manufacturer>Samsung</manufacturer>
  </row>
  <row>
    <id>2007-toshiba-56-nm-cmos</id>
    <node>Toshiba 56 nm</node>
    <year>2007</year>
    <process>56 nm</process>
    <process_nm>56</process_nm>
    <mosfet_type>CMOS</mosfet_type>
    <manufacturer>Toshiba</manufacturer>
  </row>
  <row>
    <id>2007-matsushita-45-nm-cmos</id>
    <node>Matsushita 45 nm</node>
    <year>2007</year>
    <process>45 nm</process>
    <process_nm>45</process_nm>
    <mosfet_type>CMOS</mosfet_type>
    <manufacturer>Matsushita</manufacturer>
  </row>
  <row>
    <id>2008-intel-45-nm-cmos</id>
    <node>Intel 45 nm</node>
    <year>2008</year>
    <process>45 nm</process>
    <process_nm>45</process_nm>
    <mosfet_type>CMOS</mosfet_type>
    <manufacturer>Intel</manufacturer>
    <density_per_mm2>3300000</density_per_mm2>
    <density_high_per_mm2>3300000</density_high_per_mm2>
  </row>
  <row>
    <id>2008-toshiba-43-nm-cmos</id>
    <node>Toshiba 43 nm</node>
    <year>2008</year>
    <process>43 nm</process>
    <process_nm>43</process_nm>
    <mosfet_type>CMOS</mosfet_type>
    <manufacturer>Toshiba</manufacturer>
  </row>
  <row>
    <id>2008-tsmc-40-nm-cmos</id>
    <node>TSMC 40 nm</node>
    <year>2008</year>
    <process>40 nm</process>
    <process_nm>40</process_nm>
    <mosfet_type>CMOS</mosfet_type>
    <manufacturer>TSMC</manufacturer>
  </row>
  <row>
    <id>2009-toshiba-32-nm-cmos</id>
    <node>Toshiba 32 nm</node>
    <year>2009</year>
    <process>32 nm</process>
    <process_nm>32</process_nm>
    <mosfet_type>CMOS</mosfet_type>
    <manufacturer>Toshiba</manufacturer>
  </row>
  <row>
    <id>2010-intel-32-nm-cmos</id>
    <node>Intel 32 nm</node>
    <year>2010</year>
    <process>32 nm</process>
    <process_nm>32</process_nm>
    <mosfet_type>CMOS</mosfet_type>
    <manufacturer>Intel</manufacturer>
    <density_per_mm2>7500000</density_per_mm2>
    <density_high_per_mm2>7500000</density_high_per_mm2>
  </row>
  <row>
    <id>2010-hynix-samsung-20-nm-cmos</id>
    <year>2010</year>
    <process>20 nm</process>
    <process_nm>20</process_nm>
    <mosfet_type>CMOS</mosfet_type>
    <manufacturer>Hynix, Samsung</manufacturer>
  </row>
  <row>
    <id>2012-intel-22-nm-cmos</id>
    <node>Intel 22 nm</node>
    <year>2012</year>
    <process>22 nm</process>
    <process_nm>22</process_nm>
    <mosfet_type>CMOS</mosfet_type>
    <manufacturer>Intel</manufacturer>
    <density_per_mm2>15300000</density_per_mm2>
    <density_high_per_mm2>15300000</density_high_per_mm2>
  </row>
  <row>
    <id>2012-imft-20-nm-cmos</id>
    <node>IMFT 20 nm</node>
    <year>2012</year>
    <process>20 nm</process>
    <process_nm>20</process_nm>
    <mosfet_type>CMOS</mosfet_type>
    <manufacturer>IMFT</manufacturer>
  </row>
  <row>
    <id>2012-toshiba-19-nm-cmos</id>
    <node>Toshiba 19 nm</node>
    <year>2012</year>
    <process>19 nm</process>
    <process_nm>19</process_nm>
    <mosfet_type>CMOS</mosfet_type>
    <manufacturer>Toshiba</manufacturer>
  </row>
  <row>
    <id>2013-sk-hynix-16-nm-finfet</id>
    <node>Hynix 16 nm</node>
    <year>2013</year>
    <process>16 nm</process>
    <process_nm>16</process_nm>
    <mosfet_type>FinFET</mosfet_type>
    <manufacturer>SK Hynix</manufacturer>
  </row>
  <row>
    <id>2013-tsmc-16-nm-finfet</id>
    <node>TSMC 16 nm</node>
    <year>2013</year>
    <process>16 nm</process>
    <process_nm>16</process_nm>
    <mosfet_type>FinFET</mosfet_type>
    <manufacturer>TSMC</manufacturer>
    <density_per_mm2>28880000</density_per_mm2>
    <density_high_per_mm2>28880000</density_high_per_mm2>
  </row>
  <row>
    <id>2013-samsung-10-nm-finfet</id>
    <node>Samsung 10 nm</node>
    <year>2013</year>
    <process>10 nm</process>
    <process_nm>10</process_nm>
    <mosfet_type>FinFET</mosfet_type>
    <manufacturer>Samsung</manufacturer>
    <density_per_mm2>51820000</density_per_mm2>
    <density_high_per_mm2>51820000</density_high_per_mm2>
  </row>
  <row>
    <id>2014-intel-14-nm-finfet</id>
    <node>Intel 14 nm</node>
    <year>2014</year>
    <process>14 nm</process>
    <process_nm>14</process_nm>
    <mosfet_type>FinFET</mosfet_type>
    <manufacturer>Intel</manufacturer>
    <density_per_mm2>37500000</density_per_mm2>
    <density_high_per_mm2>37500000</density_high_per_mm2>
  </row>
  <row>
    <id>2015-samsung-14-nm-finfet</id>
    <node>14LP</node>
    <year>2015</year>
    <process>14 nm</process>
    <process_nm>14</process_nm>
    <mosfet_type>FinFET</mosfet_type>
    <manufacturer>Samsung</manufacturer>
    <density_per_mm2>32940000</density_per_mm2>
    <density_high_per_mm2>32940000</density_high_per_mm2>
  </row>
  <row>
    <id>2016-tsmc-10-nm-finfet</id>
    <node>TSMC 10 nm</node>
    <year>2016</year>
    <process>10 nm</process>
    <process_nm>10</process_nm>
    <mosfet_type>FinFET</mosfet_type>
    <manufacturer>TSMC</manufacturer>
    <density_per_mm2>52510000</density_per_mm2>
    <density_high_per_mm2>52510000</density_high_per_mm2>
  </row>
  <row>
    <id>2017-globalfoundries-samsung-12-nm-finfet</id>
    <node>12LP</node>
    <year>2017</year>
    <process>12 nm</process>
    <process_nm>12</process_nm>
    <mosfet_type>FinFET</mosfet_type>
    <manufacturer>GlobalFoundries, Samsung</manufacturer>
    <density_per_mm2>36710000</density_per_mm2>
    <density_high_per_mm2>36710000</density_high_per_mm2>
  </row>
  <row>
    <id>2017-tsmc-7-nm-finfet</id>
    <node>N7FF</node>
    <year>2017</year>
    <process>7 nm</process>
    <process_nm>7</process_nm>
    <mosfet_type>FinFET</mosfet_type>
    <manufacturer>TSMC</manufacturer>
    <density_per_mm2>96500000</density_per_mm2>
    <density_high_per_mm2>101850000</density_high_per_mm2>
  </row>
  <row>
    <id>2018-samsung-8-nm-finfet</id>
    <node>8LPP</node>
    <year>2018</year>
    <process>8 nm</process>
    <process_nm>8</process_nm>
    <mosfet_type>FinFET</mosfet_type>
    <manufacturer>Samsung</manufacturer>
    <density_per_mm2>61180000</density_per_mm2>
    <density_high_per_mm2>61180000</density_high_per_mm2>
  </row>
  <row>
    <id>2018-samsung-7-nm-finfet</id>
    <node>7LPE</node>
    <year>2018</year>
    <process>7 nm</process>
    <process_nm>7</process_nm>
    <mosfet_type>FinFET</mosfet_type>
    <manufacturer>Samsung</manufacturer>
    <density_per_mm2>95300000</density_per_mm2>
    <density_high_per_mm2>95300000</density_high_per_mm2>
  </row>
  <row>
    <id>2018-intel-10-nm-finfet</id>
    <node>Intel 10 nm</node>
    <year>2018</year>
    <process>10 nm</process>
    <process_nm>10</process_nm>
    <mosfet_type>FinFET</mosfet_type>
    <manufacturer>Intel</manufacturer>
    <density_per_mm2>100760000</density_per_mm2>
    <density_high_per_mm2>106100000</density_high_per_mm2>
  </row>
  <row>
    <id>2018-samsung-5-nm-finfet</id>
    <node>5LPE</node>
    <year>2018</year>
    <process>5 nm</process>
    <process_nm>5</process_nm>
    <mosfet_type>FinFET</mosfet_type>
    <manufacturer>Samsung</manufacturer>
    <density_per_mm2>126530000</density_per_mm2>
    <density_high_per_mm2>134900000</density_high_per_mm2>
  </row>
  <row>
    <id>2019-tsmc-7-nm-finfet</id>
    <node>N7FF+</node>
    <year>2019</year>
    <process>7 nm</process>
    <process_nm>7</process_nm>
    <mosfet_type>FinFET</mosfet_type>
    <manufacturer>TSMC</manufacturer>
    <density_per_mm2>113900000</density_per_mm2>
    <density_high_per_mm2>113900000</density_high_per_mm2>
  </row>
  <row>
    <id>2019-tsmc-5-nm-finfet</id>
    <node>CLN5FF</node>
    <year>2019</year>
    <process>5 nm</process>
    <process_nm>5</process_nm>
    <mosfet_type>FinFET</mosfet_type>
    <manufacturer>TSMC</manufacturer>
    <density_per_mm2>171300000</density_per_mm2>
    <density_high_per_mm2>185460000</density_high_per_mm2>
  </row>
  <row>
    <id>2021-intel-7-nm-finfet</id>
    <node>Intel 7</node>
    <year>2021</year>
    <process>7 nm</process>
    <process_nm>7</process_nm>
    <mosfet_type>FinFET</mosfet_type>
    <manufacturer>Intel</manufacturer>
    <density_per_mm2>100760000</density_per_mm2>
    <density_high_per_mm2>106100000</density_high_per_mm2>
  </row>
  <row>
    <id>2021-samsung-4-nm-finfet</id>
    <node>4LPE</node>
    <year>2021</year>
    <process>4 nm</process>
    <process_nm>4</process_nm>
    <mosfet_type>FinFET</mosfet_type>
    <manufacturer>Samsung</manufacturer>
    <density_per_mm2>145700000</density_per_mm2>
    <density_high_per_mm2>145700000</density_high_per_mm2>
  </row>
  <row>
    <id>2021-tsmc-4-nm-finfet</id>
    <node>N4</node>
    <year>2021</year>
    <process>4 nm</process>
    <process_nm>4</process_nm>
    <mosfet_type>FinFET</mosfet_type>
    <manufacturer>TSMC</manufacturer>
    <density_per_mm2>196600000</density_per_mm2>
    <density_high_per_mm2>196600000</density_high_per_mm2>
  </row>
  <row>
    <id>2022-tsmc-4-nm-finfet</id>
    <node>N4P</node>
    <year>2022</year>
    <process>4 nm</process>
    <process_nm>4</process_nm>
    <mosfet_type>FinFET</mosfet_type>
    <manufacturer>TSMC</manufacturer>
    <density_per_mm2>196600000</density_per_mm2>
    <density_high_per_mm2>196600000</density_high_per_mm2>
  </row>
  <row>
    <id>2022-samsung-3-nm-mbcfet</id>
    <node>3GAE</node>
    <year>2022</year>
    <process>3 nm</process>
    <process_nm>3</process_nm>
    <mosfet_type>MBCFET</mosfet_type>
    <manufacturer>Samsung</manufacturer>
    <density_per_mm2>202850000</density_per_mm2>
    <density_high_per_mm2>202850000</density_high_per_mm2>
  </row>
  <row>
    <id>2022-tsmc-3-nm-finfet</id>
    <node>N3</node>
    <year>2022</year>
    <process>3 nm</process>
    <process_nm>3</process_nm>
    <mosfet_type>FinFET</mosfet_type>
    <manufacturer>TSMC</manufacturer>
    <density_per_mm2>314730000</density_per_mm2>
    <density_high_per_mm2>314730000</density_high_per_mm2>
  </row>
  <row>
    <id>2023-tsmc-4-nm-finfet</id>
    <node>N4X</node>
    <year>2023</year>
    <process>4 nm</process>
    <process_nm>4</process_nm>
    <mosfet_type>FinFET</mosfet_type>
    <manufacturer>TSMC</manufacturer>
  </row>
  <row>
    <id>2023-tsmc-3-nm-finfet</id>
    <node>N3E</node>
    <year>2023</year>
    <process>3 nm</process>
    <process_nm>3</process_nm>
    <mosfet_type>FinFET</mosfet_type>
    <manufacturer>TSMC</manufacturer>
  </row>
  <row>
    <id>2023-samsung-3-nm-mbcfet</id>
    <node>3GAP</node>
    <year>2023</year>
    <process>3 nm</process>
    <process_nm>3</process_nm>
    <mosfet_type>MBCFET</mosfet_type>
    <manufacturer>Samsung</manufacturer>
  </row>
  <row>
    <id>2023-intel-4-nm-finfet</id>
    <node>Intel 4</node>
    <year>2023</year>
    <process>4 nm</process>
    <process_nm>4</process_nm>
    <mosfet_type>FinFET</mosfet_type>
    <manufacturer>Intel</manufacturer>
    <density_per_mm2>160000000</density_per_mm2>
    <density_high_per_mm2>160000000</density_high_per_mm2>
  </row>
  <row>
    <id>2023-intel-3-nm-finfet</id>
    <node>Intel 3</node>
    <year>2023</year>
    <process>3 nm</process>
    <process_nm>3</process_nm>
    <mosfet_type>FinFET</mosfet_type>
    <manufacturer>Intel</manufacturer>
  </row>
  <row>
    <id>2024-intel-2-nm-ribbonfet</id>
    <node>Intel 20A</node>
    <year>2024</year>
    <process>2 nm</process>
    <process_nm>2</process_nm>
    <mosfet_type>RibbonFET</mosfet_type>
    <manufacturer>Intel</manufacturer>
  </row>
  <row>
    <id>2025-intel-sub-2-nm-ribbonfet</id>
    <node>Intel 18A</node>
    <year>2025</year>
    <process>sub-2 nm</process>
    <mosfet_type>RibbonFET</mosfet_type>
    <manufacturer>Intel</manufacturer>
    <density_per_mm2>238000000</density_per_mm2>
    <density_high_per_mm2>238000000</density_high_per_mm2>
  </row>
  <row>
    <id>2025-samsung-2-nm-mbcfet</id>
    <node>2GAP</node>
    <year>2025</year>
    <process>2 nm</process>
    <process_nm>2</process_nm>
    <mosfet_type>MBCFET</mosfet_type>
    <manufacturer>Samsung</manufacturer>
  </row>
  <row>
    <id>2025-tsmc-2-nm-gaafet</id>
    <node>N2</node>
    <year>2025</year>
    <process>2 nm</process>
    <process_nm>2</process_nm>
    <mosfet_type>GAAFET</mosfet_type>
    <manufacturer>TSMC</manufacturer>
  </row>
</dataset>
