id	node	year	process	process_nm	mosfet_type	manufacturer	density_per_mm2	density_high_per_mm2
1960-bell-labs-20-000-nm-pmos		1960	20,000 nm	20000	PMOS	Bell Labs		
1960-bell-labs-20-000-nm-nmos		1960	20,000 nm	20000	NMOS	Bell Labs		
1963-fairchild-unknown-cmos		1963			CMOS	Fairchild		
1964-general-microelectronics-unknown-pmos		1964			PMOS	General Microelectronics		
1968-rca-20-000-nm-cmos		1968	20,000 nm	20000	CMOS	RCA		
1969-intel-12-000-nm-pmos		1969	12,000 nm	12000	PMOS	Intel		
1970-rca-10-000-nm-cmos		1970	10,000 nm	10000	CMOS	RCA		
1970-intel-8-000-nm-pmos		1970	8,000 nm	8000	PMOS	Intel	300	300
1971-intel-10-000-nm-pmos		1971	10,000 nm	10000	PMOS	Intel		
1971-general-instrument-unknown-pmos		1971			PMOS	General Instrument	480	480
1973-texas-instruments-unknown-nmos		1973			NMOS	Texas Instruments		
1973-mostek-unknown-nmos		1973			NMOS	Mostek	220	220
1973-nec-7-500-nm-nmos		1973	7,500 nm	7500	NMOS	NEC		
1973-toshiba-6-000-nm-pmos		1973	6,000 nm	6000	PMOS	Toshiba		
1976-hitachi-intel-5-000-nm-nmos		1976	5,000 nm	5000	NMOS	Hitachi, Intel		
1976-rca-5-000-nm-cmos		1976	5,000 nm	5000	CMOS	RCA		
1976-zilog-4-000-nm-nmos		1976	4,000 nm	4000	NMOS	Zilog		
1976-intel-3-000-nm-nmos		1976	3,000 nm	3000	NMOS	Intel		
1977-ntt-unknown-nmos		1977			NMOS	NTT	1850	1850
1978-hitachi-3-000-nm-cmos		1978	3,000 nm	3000	CMOS	Hitachi		
1978-texas-instruments-2-500-nm-nmos		1978	2,500 nm	2500	NMOS	Texas Instruments		
1978-nec-ntt-2-000-nm-nmos		1978	2,000 nm	2000	NMOS	NEC, NTT		
1979-siemens-unknown-vmos		1979			VMOS	Siemens	2600	2600
1979-ntt-1-000-nm-nmos		1979	1,000 nm	1000	NMOS	NTT	7280	7280
1980-ntt-1-000-nm-nmos		1980	1,000 nm	1000	NMOS	NTT	7620	7620
1983-toshiba-2-000-nm-cmos		1983	2,000 nm	2000	CMOS	Toshiba		
1983-intel-1-500-nm-cmos		1983	1,500 nm	1500	CMOS	Intel		
1983-intel-1-200-nm-cmos		1983	1,200 nm	1200	CMOS	Intel		
1984-ntt-800-nm-cmos		1984	800 nm	800	CMOS	NTT		
1987-fujitsu-700-nm-cmos		1987	700 nm	700	CMOS	Fujitsu		
1989-mitsubishi-nec-toshiba-600-nm-cmos		1989	600 nm	600	CMOS	Mitsubishi, NEC, Toshiba		
1989-hitachi-mitsubishi-nec-toshiba-500-nm-cmos		1989	500 nm	500	CMOS	Hitachi, Mitsubishi, NEC, Toshiba		
1991-matsushita-mitsubishi-fujitsu-toshiba-400-nm-cmos		1991	400 nm	400	CMOS	Matsushita, Mitsubishi, Fujitsu, Toshiba		
1993-sony-350-nm-cmos		1993	350 nm	350	CMOS	Sony		
1993-hitachi-nec-250-nm-cmos		1993	250 nm	250	CMOS	Hitachi, NEC		
1994-nec-350-nm-cmos	3LM	1994	350 nm	350	CMOS	NEC	32000	32000
1995-hitachi-160-nm-cmos		1995	160 nm	160	CMOS	Hitachi		
1996-mitsubishi-150-nm-cmos		1996	150 nm	150	CMOS	Mitsubishi		
1998-tsmc-180-nm-cmos	TSMC 180 nm	1998	180 nm	180	CMOS	TSMC		
1999-fujitsu-180-nm-cmos	CS80	1999	180 nm	180	CMOS	Fujitsu		
1999-intel-sony-toshiba-180-nm-cmos		1999	180 nm	180	CMOS	Intel, Sony, Toshiba		
1999-fujitsu-170-nm-cmos	CS85	1999	170 nm	170	CMOS	Fujitsu		
1999-samsung-140-nm-cmos	Samsung 140 nm	1999	140 nm	140	CMOS	Samsung		
2001-fujitsu-intel-130-nm-cmos		2001	130 nm	130	CMOS	Fujitsu, Intel		
2001-samsung-100-nm-cmos	Samsung 100 nm	2001	100 nm	100	CMOS	Samsung		
2002-sony-toshiba-samsung-90-nm-cmos		2002	90 nm	90	CMOS	Sony, Toshiba, Samsung		
2003-fujitsu-90-nm-cmos	CS100	2003	90 nm	90	CMOS	Fujitsu		
2004-intel-90-nm-cmos	Intel 90 nm	2004	90 nm	90	CMOS	Intel	1450000	1450000
2004-samsung-80-nm-cmos	Samsung 80 nm	2004	80 nm	80	CMOS	Samsung		
2004-fujitsu-toshiba-65-nm-cmos		2004	65 nm	65	CMOS	Fujitsu, Toshiba		
2004-samsung-60-nm-cmos	Samsung 60 nm	2004	60 nm	60	CMOS	Samsung		
2004-tsmc-45-nm-cmos	TSMC 45 nm	2004	45 nm	45	CMOS	TSMC		
2005-elpida-memory-90-nm-cmos	Elpida 90 nm	2005	90 nm	90	CMOS	Elpida Memory		
2005-fujitsu-65-nm-cmos	CS200	2005	65 nm	65	CMOS	Fujitsu		
2005-samsung-50-nm-cmos	Samsung 50 nm	2005	50 nm	50	CMOS	Samsung		
2006-intel-65-nm-cmos	Intel 65 nm	2006	65 nm	65	CMOS	Intel	2080000	2080000
2006-samsung-40-nm-cmos	Samsung 40 nm	2006	40 nm	40	CMOS	Samsung		
2007-toshiba-56-nm-cmos	Toshiba 56 nm	2007	56 nm	56	CMOS	Toshiba		
2007-matsushita-45-nm-cmos	Matsushita 45 nm	2007	45 nm	45	CMOS	Matsushita		
2008-intel-45-nm-cmos	Intel 45 nm	2008	45 nm	45	CMOS	Intel	3300000	3300000
2008-toshiba-43-nm-cmos	Toshiba 43 nm	2008	43 nm	43	CMOS	Toshiba		
2008-tsmc-40-nm-cmos	TSMC 40 nm	2008	40 nm	40	CMOS	TSMC		
2009-toshiba-32-nm-cmos	Toshiba 32 nm	2009	32 nm	32	CMOS	Toshiba		
2010-intel-32-nm-cmos	Intel 32 nm	2010	32 nm	32	CMOS	Intel	7500000	7500000
2010-hynix-samsung-20-nm-cmos		2010	20 nm	20	CMOS	Hynix, Samsung		
2012-intel-22-nm-cmos	Intel 22 nm	2012	22 nm	22	CMOS	Intel	15300000	15300000
2012-imft-20-nm-cmos	IMFT 20 nm	2012	20 nm	20	CMOS	IMFT		
2012-toshiba-19-nm-cmos	Toshiba 19 nm	2012	19 nm	19	CMOS	Toshiba		
2013-sk-hynix-16-nm-finfet	Hynix 16 nm	2013	16 nm	16	FinFET	SK Hynix		
2013-tsmc-16-nm-finfet	TSMC 16 nm	2013	16 nm	16	FinFET	TSMC	28880000	28880000
2013-samsung-10-nm-finfet	Samsung 10 nm	2013	10 nm	10	FinFET	Samsung	51820000	51820000
2014-intel-14-nm-finfet	Intel 14 nm	2014	14 nm	14	FinFET	Intel	37500000	37500000
2015-samsung-14-nm-finfet	14LP	2015	14 nm	14	FinFET	Samsung	32940000	32940000
2016-tsmc-10-nm-finfet	TSMC 10 nm	2016	10 nm	10	FinFET	TSMC	52510000	52510000
2017-globalfoundries-samsung-12-nm-finfet	12LP	2017	12 nm	12	FinFET	GlobalFoundries, Samsung	36710000	36710000
2017-tsmc-7-nm-finfet	N7FF	2017	7 nm	7	FinFET	TSMC	96500000	101850000
2018-samsung-8-nm-finfet	8LPP	2018	8 nm	8	FinFET	Samsung	61180000	61180000
2018-samsung-7-nm-finfet	7LPE	2018	7 nm	7	FinFET	Samsung	95300000	95300000
2018-intel-10-nm-finfet	Intel 10 nm	2018	10 nm	10	FinFET	Intel	100760000	106100000
2018-samsung-5-nm-finfet	5LPE	2018	5 nm	5	FinFET	Samsung	126530000	134900000
2019-tsmc-7-nm-finfet	N7FF+	2019	7 nm	7	FinFET	TSMC	113900000	113900000
2019-tsmc-5-nm-finfet	CLN5FF	2019	5 nm	5	FinFET	TSMC	171300000	185460000
2021-intel-7-nm-finfet	Intel 7	2021	7 nm	7	FinFET	Intel	100760000	106100000
2021-samsung-4-nm-finfet	4LPE	2021	4 nm	4	FinFET	Samsung	145700000	145700000
2021-tsmc-4-nm-finfet	N4	2021	4 nm	4	FinFET	TSMC	196600000	196600000
2022-tsmc-4-nm-finfet	N4P	2022	4 nm	4	FinFET	TSMC	196600000	196600000
2022-samsung-3-nm-mbcfet	3GAE	2022	3 nm	3	MBCFET	Samsung	202850000	202850000
2022-tsmc-3-nm-finfet	N3	2022	3 nm	3	FinFET	TSMC	314730000	314730000
2023-tsmc-4-nm-finfet	N4X	2023	4 nm	4	FinFET	TSMC		
2023-tsmc-3-nm-finfet	N3E	2023	3 nm	3	FinFET	TSMC		
2023-samsung-3-nm-mbcfet	3GAP	2023	3 nm	3	MBCFET	Samsung		
2023-intel-4-nm-finfet	Intel 4	2023	4 nm	4	FinFET	Intel	160000000	160000000
2023-intel-3-nm-finfet	Intel 3	2023	3 nm	3	FinFET	Intel		
2024-intel-2-nm-ribbonfet	Intel 20A	2024	2 nm	2	RibbonFET	Intel		
2025-intel-sub-2-nm-ribbonfet	Intel 18A	2025	sub-2 nm		RibbonFET	Intel	238000000	238000000
2025-samsung-2-nm-mbcfet	2GAP	2025	2 nm	2	MBCFET	Samsung		
2025-tsmc-2-nm-gaafet	N2	2025	2 nm	2	GAAFET	TSMC