# Transistor density by semiconductor process node

| Row | Node name | Production year | Process | Process (nm) (nm) | Transistor type | Manufacturer(s) | Density (transistors/mm²) | Density (high) (transistors/mm²) |
| --- | --- | ---: | --- | ---: | --- | --- | ---: | ---: |
| 1960-bell-labs-20-000-nm-pmos |  | 1960 | 20,000 nm | 20000 | PMOS | Bell Labs |  |  |
| 1960-bell-labs-20-000-nm-nmos |  | 1960 | 20,000 nm | 20000 | NMOS | Bell Labs |  |  |
| 1963-fairchild-unknown-cmos |  | 1963 |  |  | CMOS | Fairchild |  |  |
| 1964-general-microelectronics-unknown-pmos |  | 1964 |  |  | PMOS | General Microelectronics |  |  |
| 1968-rca-20-000-nm-cmos |  | 1968 | 20,000 nm | 20000 | CMOS | RCA |  |  |
| 1969-intel-12-000-nm-pmos |  | 1969 | 12,000 nm | 12000 | PMOS | Intel |  |  |
| 1970-rca-10-000-nm-cmos |  | 1970 | 10,000 nm | 10000 | CMOS | RCA |  |  |
| 1970-intel-8-000-nm-pmos |  | 1970 | 8,000 nm | 8000 | PMOS | Intel | 300 | 300 |
| 1971-intel-10-000-nm-pmos |  | 1971 | 10,000 nm | 10000 | PMOS | Intel |  |  |
| 1971-general-instrument-unknown-pmos |  | 1971 |  |  | PMOS | General Instrument | 480 | 480 |
| 1973-texas-instruments-unknown-nmos |  | 1973 |  |  | NMOS | Texas Instruments |  |  |
| 1973-mostek-unknown-nmos |  | 1973 |  |  | NMOS | Mostek | 220 | 220 |
| 1973-nec-7-500-nm-nmos |  | 1973 | 7,500 nm | 7500 | NMOS | NEC |  |  |
| 1973-toshiba-6-000-nm-pmos |  | 1973 | 6,000 nm | 6000 | PMOS | Toshiba |  |  |
| 1976-hitachi-intel-5-000-nm-nmos |  | 1976 | 5,000 nm | 5000 | NMOS | Hitachi, Intel |  |  |
| 1976-rca-5-000-nm-cmos |  | 1976 | 5,000 nm | 5000 | CMOS | RCA |  |  |
| 1976-zilog-4-000-nm-nmos |  | 1976 | 4,000 nm | 4000 | NMOS | Zilog |  |  |
| 1976-intel-3-000-nm-nmos |  | 1976 | 3,000 nm | 3000 | NMOS | Intel |  |  |
| 1977-ntt-unknown-nmos |  | 1977 |  |  | NMOS | NTT | 1850 | 1850 |
| 1978-hitachi-3-000-nm-cmos |  | 1978 | 3,000 nm | 3000 | CMOS | Hitachi |  |  |
| 1978-texas-instruments-2-500-nm-nmos |  | 1978 | 2,500 nm | 2500 | NMOS | Texas Instruments |  |  |
| 1978-nec-ntt-2-000-nm-nmos |  | 1978 | 2,000 nm | 2000 | NMOS | NEC, NTT |  |  |
| 1979-siemens-unknown-vmos |  | 1979 |  |  | VMOS | Siemens | 2600 | 2600 |
| 1979-ntt-1-000-nm-nmos |  | 1979 | 1,000 nm | 1000 | NMOS | NTT | 7280 | 7280 |
| 1980-ntt-1-000-nm-nmos |  | 1980 | 1,000 nm | 1000 | NMOS | NTT | 7620 | 7620 |
| 1983-toshiba-2-000-nm-cmos |  | 1983 | 2,000 nm | 2000 | CMOS | Toshiba |  |  |
| 1983-intel-1-500-nm-cmos |  | 1983 | 1,500 nm | 1500 | CMOS | Intel |  |  |
| 1983-intel-1-200-nm-cmos |  | 1983 | 1,200 nm | 1200 | CMOS | Intel |  |  |
| 1984-ntt-800-nm-cmos |  | 1984 | 800 nm | 800 | CMOS | NTT |  |  |
| 1987-fujitsu-700-nm-cmos |  | 1987 | 700 nm | 700 | CMOS | Fujitsu |  |  |
| 1989-mitsubishi-nec-toshiba-600-nm-cmos |  | 1989 | 600 nm | 600 | CMOS | Mitsubishi, NEC, Toshiba |  |  |
| 1989-hitachi-mitsubishi-nec-toshiba-500-nm-cmos |  | 1989 | 500 nm | 500 | CMOS | Hitachi, Mitsubishi, NEC, Toshiba |  |  |
| 1991-matsushita-mitsubishi-fujitsu-toshiba-400-nm-cmos |  | 1991 | 400 nm | 400 | CMOS | Matsushita, Mitsubishi, Fujitsu, Toshiba |  |  |
| 1993-sony-350-nm-cmos |  | 1993 | 350 nm | 350 | CMOS | Sony |  |  |
| 1993-hitachi-nec-250-nm-cmos |  | 1993 | 250 nm | 250 | CMOS | Hitachi, NEC |  |  |
| 1994-nec-350-nm-cmos | 3LM | 1994 | 350 nm | 350 | CMOS | NEC | 32000 | 32000 |
| 1995-hitachi-160-nm-cmos |  | 1995 | 160 nm | 160 | CMOS | Hitachi |  |  |
| 1996-mitsubishi-150-nm-cmos |  | 1996 | 150 nm | 150 | CMOS | Mitsubishi |  |  |
| 1998-tsmc-180-nm-cmos | TSMC 180 nm | 1998 | 180 nm | 180 | CMOS | TSMC |  |  |
| 1999-fujitsu-180-nm-cmos | CS80 | 1999 | 180 nm | 180 | CMOS | Fujitsu |  |  |
| 1999-intel-sony-toshiba-180-nm-cmos |  | 1999 | 180 nm | 180 | CMOS | Intel, Sony, Toshiba |  |  |
| 1999-fujitsu-170-nm-cmos | CS85 | 1999 | 170 nm | 170 | CMOS | Fujitsu |  |  |
| 1999-samsung-140-nm-cmos | Samsung 140 nm | 1999 | 140 nm | 140 | CMOS | Samsung |  |  |
| 2001-fujitsu-intel-130-nm-cmos |  | 2001 | 130 nm | 130 | CMOS | Fujitsu, Intel |  |  |
| 2001-samsung-100-nm-cmos | Samsung 100 nm | 2001 | 100 nm | 100 | CMOS | Samsung |  |  |
| 2002-sony-toshiba-samsung-90-nm-cmos |  | 2002 | 90 nm | 90 | CMOS | Sony, Toshiba, Samsung |  |  |
| 2003-fujitsu-90-nm-cmos | CS100 | 2003 | 90 nm | 90 | CMOS | Fujitsu |  |  |
| 2004-intel-90-nm-cmos | Intel 90 nm | 2004 | 90 nm | 90 | CMOS | Intel | 1450000 | 1450000 |
| 2004-samsung-80-nm-cmos | Samsung 80 nm | 2004 | 80 nm | 80 | CMOS | Samsung |  |  |
| 2004-fujitsu-toshiba-65-nm-cmos |  | 2004 | 65 nm | 65 | CMOS | Fujitsu, Toshiba |  |  |
| 2004-samsung-60-nm-cmos | Samsung 60 nm | 2004 | 60 nm | 60 | CMOS | Samsung |  |  |
| 2004-tsmc-45-nm-cmos | TSMC 45 nm | 2004 | 45 nm | 45 | CMOS | TSMC |  |  |
| 2005-elpida-memory-90-nm-cmos | Elpida 90 nm | 2005 | 90 nm | 90 | CMOS | Elpida Memory |  |  |
| 2005-fujitsu-65-nm-cmos | CS200 | 2005 | 65 nm | 65 | CMOS | Fujitsu |  |  |
| 2005-samsung-50-nm-cmos | Samsung 50 nm | 2005 | 50 nm | 50 | CMOS | Samsung |  |  |
| 2006-intel-65-nm-cmos | Intel 65 nm | 2006 | 65 nm | 65 | CMOS | Intel | 2080000 | 2080000 |
| 2006-samsung-40-nm-cmos | Samsung 40 nm | 2006 | 40 nm | 40 | CMOS | Samsung |  |  |
| 2007-toshiba-56-nm-cmos | Toshiba 56 nm | 2007 | 56 nm | 56 | CMOS | Toshiba |  |  |
| 2007-matsushita-45-nm-cmos | Matsushita 45 nm | 2007 | 45 nm | 45 | CMOS | Matsushita |  |  |
| 2008-intel-45-nm-cmos | Intel 45 nm | 2008 | 45 nm | 45 | CMOS | Intel | 3300000 | 3300000 |
| 2008-toshiba-43-nm-cmos | Toshiba 43 nm | 2008 | 43 nm | 43 | CMOS | Toshiba |  |  |
| 2008-tsmc-40-nm-cmos | TSMC 40 nm | 2008 | 40 nm | 40 | CMOS | TSMC |  |  |
| 2009-toshiba-32-nm-cmos | Toshiba 32 nm | 2009 | 32 nm | 32 | CMOS | Toshiba |  |  |
| 2010-intel-32-nm-cmos | Intel 32 nm | 2010 | 32 nm | 32 | CMOS | Intel | 7500000 | 7500000 |
| 2010-hynix-samsung-20-nm-cmos |  | 2010 | 20 nm | 20 | CMOS | Hynix, Samsung |  |  |
| 2012-intel-22-nm-cmos | Intel 22 nm | 2012 | 22 nm | 22 | CMOS | Intel | 15300000 | 15300000 |
| 2012-imft-20-nm-cmos | IMFT 20 nm | 2012 | 20 nm | 20 | CMOS | IMFT |  |  |
| 2012-toshiba-19-nm-cmos | Toshiba 19 nm | 2012 | 19 nm | 19 | CMOS | Toshiba |  |  |
| 2013-sk-hynix-16-nm-finfet | Hynix 16 nm | 2013 | 16 nm | 16 | FinFET | SK Hynix |  |  |
| 2013-tsmc-16-nm-finfet | TSMC 16 nm | 2013 | 16 nm | 16 | FinFET | TSMC | 28880000 | 28880000 |
| 2013-samsung-10-nm-finfet | Samsung 10 nm | 2013 | 10 nm | 10 | FinFET | Samsung | 51820000 | 51820000 |
| 2014-intel-14-nm-finfet | Intel 14 nm | 2014 | 14 nm | 14 | FinFET | Intel | 37500000 | 37500000 |
| 2015-samsung-14-nm-finfet | 14LP | 2015 | 14 nm | 14 | FinFET | Samsung | 32940000 | 32940000 |
| 2016-tsmc-10-nm-finfet | TSMC 10 nm | 2016 | 10 nm | 10 | FinFET | TSMC | 52510000 | 52510000 |
| 2017-globalfoundries-samsung-12-nm-finfet | 12LP | 2017 | 12 nm | 12 | FinFET | GlobalFoundries, Samsung | 36710000 | 36710000 |
| 2017-tsmc-7-nm-finfet | N7FF | 2017 | 7 nm | 7 | FinFET | TSMC | 96500000 | 101850000 |
| 2018-samsung-8-nm-finfet | 8LPP | 2018 | 8 nm | 8 | FinFET | Samsung | 61180000 | 61180000 |
| 2018-samsung-7-nm-finfet | 7LPE | 2018 | 7 nm | 7 | FinFET | Samsung | 95300000 | 95300000 |
| 2018-intel-10-nm-finfet | Intel 10 nm | 2018 | 10 nm | 10 | FinFET | Intel | 100760000 | 106100000 |
| 2018-samsung-5-nm-finfet | 5LPE | 2018 | 5 nm | 5 | FinFET | Samsung | 126530000 | 134900000 |
| 2019-tsmc-7-nm-finfet | N7FF+ | 2019 | 7 nm | 7 | FinFET | TSMC | 113900000 | 113900000 |
| 2019-tsmc-5-nm-finfet | CLN5FF | 2019 | 5 nm | 5 | FinFET | TSMC | 171300000 | 185460000 |
| 2021-intel-7-nm-finfet | Intel 7 | 2021 | 7 nm | 7 | FinFET | Intel | 100760000 | 106100000 |
| 2021-samsung-4-nm-finfet | 4LPE | 2021 | 4 nm | 4 | FinFET | Samsung | 145700000 | 145700000 |
| 2021-tsmc-4-nm-finfet | N4 | 2021 | 4 nm | 4 | FinFET | TSMC | 196600000 | 196600000 |
| 2022-tsmc-4-nm-finfet | N4P | 2022 | 4 nm | 4 | FinFET | TSMC | 196600000 | 196600000 |
| 2022-samsung-3-nm-mbcfet | 3GAE | 2022 | 3 nm | 3 | MBCFET | Samsung | 202850000 | 202850000 |
| 2022-tsmc-3-nm-finfet | N3 | 2022 | 3 nm | 3 | FinFET | TSMC | 314730000 | 314730000 |
| 2023-tsmc-4-nm-finfet | N4X | 2023 | 4 nm | 4 | FinFET | TSMC |  |  |
| 2023-tsmc-3-nm-finfet | N3E | 2023 | 3 nm | 3 | FinFET | TSMC |  |  |
| 2023-samsung-3-nm-mbcfet | 3GAP | 2023 | 3 nm | 3 | MBCFET | Samsung |  |  |
| 2023-intel-4-nm-finfet | Intel 4 | 2023 | 4 nm | 4 | FinFET | Intel | 160000000 | 160000000 |
| 2023-intel-3-nm-finfet | Intel 3 | 2023 | 3 nm | 3 | FinFET | Intel |  |  |
| 2024-intel-2-nm-ribbonfet | Intel 20A | 2024 | 2 nm | 2 | RibbonFET | Intel |  |  |
| 2025-intel-sub-2-nm-ribbonfet | Intel 18A | 2025 | sub-2 nm |  | RibbonFET | Intel | 238000000 | 238000000 |
| 2025-samsung-2-nm-mbcfet | 2GAP | 2025 | 2 nm | 2 | MBCFET | Samsung |  |  |
| 2025-tsmc-2-nm-gaafet | N2 | 2025 | 2 nm | 2 | GAAFET | TSMC |  |  |

Source: https://aidb.si/d/transistor-density-by-process-node — From Wikipedia, CC BY-SA 4.0: "Transistor count" (https://en.wikipedia.org/wiki/Transistor_count), by Wikipedia contributors. Wikidata identifiers are CC0.