Transistor density by semiconductor process node

Source: https://aidb.si/d/transistor-density-by-process-node — From Wikipedia, CC BY-SA 4.0: "Transistor count" (https://en.wikipedia.org/wiki/Transistor_count), by Wikipedia contributors. Wikidata identifiers are CC0.

RowNode nameProduction yearProcessProcess (nm) (nm)Transistor typeManufacturer(s)Density (transistors/mm²)Density (high) (transistors/mm²)
1960-bell-labs-20-000-nm-pmos196020,000 nm20000PMOSBell Labs
1960-bell-labs-20-000-nm-nmos196020,000 nm20000NMOSBell Labs
1963-fairchild-unknown-cmos1963CMOSFairchild
1964-general-microelectronics-unknown-pmos1964PMOSGeneral Microelectronics
1968-rca-20-000-nm-cmos196820,000 nm20000CMOSRCA
1969-intel-12-000-nm-pmos196912,000 nm12000PMOSIntel
1970-rca-10-000-nm-cmos197010,000 nm10000CMOSRCA
1970-intel-8-000-nm-pmos19708,000 nm8000PMOSIntel300300
1971-intel-10-000-nm-pmos197110,000 nm10000PMOSIntel
1971-general-instrument-unknown-pmos1971PMOSGeneral Instrument480480
1973-texas-instruments-unknown-nmos1973NMOSTexas Instruments
1973-mostek-unknown-nmos1973NMOSMostek220220
1973-nec-7-500-nm-nmos19737,500 nm7500NMOSNEC
1973-toshiba-6-000-nm-pmos19736,000 nm6000PMOSToshiba
1976-hitachi-intel-5-000-nm-nmos19765,000 nm5000NMOSHitachi, Intel
1976-rca-5-000-nm-cmos19765,000 nm5000CMOSRCA
1976-zilog-4-000-nm-nmos19764,000 nm4000NMOSZilog
1976-intel-3-000-nm-nmos19763,000 nm3000NMOSIntel
1977-ntt-unknown-nmos1977NMOSNTT18501850
1978-hitachi-3-000-nm-cmos19783,000 nm3000CMOSHitachi
1978-texas-instruments-2-500-nm-nmos19782,500 nm2500NMOSTexas Instruments
1978-nec-ntt-2-000-nm-nmos19782,000 nm2000NMOSNEC, NTT
1979-siemens-unknown-vmos1979VMOSSiemens26002600
1979-ntt-1-000-nm-nmos19791,000 nm1000NMOSNTT72807280
1980-ntt-1-000-nm-nmos19801,000 nm1000NMOSNTT76207620
1983-toshiba-2-000-nm-cmos19832,000 nm2000CMOSToshiba
1983-intel-1-500-nm-cmos19831,500 nm1500CMOSIntel
1983-intel-1-200-nm-cmos19831,200 nm1200CMOSIntel
1984-ntt-800-nm-cmos1984800 nm800CMOSNTT
1987-fujitsu-700-nm-cmos1987700 nm700CMOSFujitsu
1989-mitsubishi-nec-toshiba-600-nm-cmos1989600 nm600CMOSMitsubishi, NEC, Toshiba
1989-hitachi-mitsubishi-nec-toshiba-500-nm-cmos1989500 nm500CMOSHitachi, Mitsubishi, NEC, Toshiba
1991-matsushita-mitsubishi-fujitsu-toshiba-400-nm-cmos1991400 nm400CMOSMatsushita, Mitsubishi, Fujitsu, Toshiba
1993-sony-350-nm-cmos1993350 nm350CMOSSony
1993-hitachi-nec-250-nm-cmos1993250 nm250CMOSHitachi, NEC
1994-nec-350-nm-cmos3LM1994350 nm350CMOSNEC3200032000
1995-hitachi-160-nm-cmos1995160 nm160CMOSHitachi
1996-mitsubishi-150-nm-cmos1996150 nm150CMOSMitsubishi
1998-tsmc-180-nm-cmosTSMC 180 nm1998180 nm180CMOSTSMC
1999-fujitsu-180-nm-cmosCS801999180 nm180CMOSFujitsu
1999-intel-sony-toshiba-180-nm-cmos1999180 nm180CMOSIntel, Sony, Toshiba
1999-fujitsu-170-nm-cmosCS851999170 nm170CMOSFujitsu
1999-samsung-140-nm-cmosSamsung 140 nm1999140 nm140CMOSSamsung
2001-fujitsu-intel-130-nm-cmos2001130 nm130CMOSFujitsu, Intel
2001-samsung-100-nm-cmosSamsung 100 nm2001100 nm100CMOSSamsung
2002-sony-toshiba-samsung-90-nm-cmos200290 nm90CMOSSony, Toshiba, Samsung
2003-fujitsu-90-nm-cmosCS100200390 nm90CMOSFujitsu
2004-intel-90-nm-cmosIntel 90 nm200490 nm90CMOSIntel14500001450000
2004-samsung-80-nm-cmosSamsung 80 nm200480 nm80CMOSSamsung
2004-fujitsu-toshiba-65-nm-cmos200465 nm65CMOSFujitsu, Toshiba
2004-samsung-60-nm-cmosSamsung 60 nm200460 nm60CMOSSamsung
2004-tsmc-45-nm-cmosTSMC 45 nm200445 nm45CMOSTSMC
2005-elpida-memory-90-nm-cmosElpida 90 nm200590 nm90CMOSElpida Memory
2005-fujitsu-65-nm-cmosCS200200565 nm65CMOSFujitsu
2005-samsung-50-nm-cmosSamsung 50 nm200550 nm50CMOSSamsung
2006-intel-65-nm-cmosIntel 65 nm200665 nm65CMOSIntel20800002080000
2006-samsung-40-nm-cmosSamsung 40 nm200640 nm40CMOSSamsung
2007-toshiba-56-nm-cmosToshiba 56 nm200756 nm56CMOSToshiba
2007-matsushita-45-nm-cmosMatsushita 45 nm200745 nm45CMOSMatsushita
2008-intel-45-nm-cmosIntel 45 nm200845 nm45CMOSIntel33000003300000
2008-toshiba-43-nm-cmosToshiba 43 nm200843 nm43CMOSToshiba
2008-tsmc-40-nm-cmosTSMC 40 nm200840 nm40CMOSTSMC
2009-toshiba-32-nm-cmosToshiba 32 nm200932 nm32CMOSToshiba
2010-intel-32-nm-cmosIntel 32 nm201032 nm32CMOSIntel75000007500000
2010-hynix-samsung-20-nm-cmos201020 nm20CMOSHynix, Samsung
2012-intel-22-nm-cmosIntel 22 nm201222 nm22CMOSIntel1530000015300000
2012-imft-20-nm-cmosIMFT 20 nm201220 nm20CMOSIMFT
2012-toshiba-19-nm-cmosToshiba 19 nm201219 nm19CMOSToshiba
2013-sk-hynix-16-nm-finfetHynix 16 nm201316 nm16FinFETSK Hynix
2013-tsmc-16-nm-finfetTSMC 16 nm201316 nm16FinFETTSMC2888000028880000
2013-samsung-10-nm-finfetSamsung 10 nm201310 nm10FinFETSamsung5182000051820000
2014-intel-14-nm-finfetIntel 14 nm201414 nm14FinFETIntel3750000037500000
2015-samsung-14-nm-finfet14LP201514 nm14FinFETSamsung3294000032940000
2016-tsmc-10-nm-finfetTSMC 10 nm201610 nm10FinFETTSMC5251000052510000
2017-globalfoundries-samsung-12-nm-finfet12LP201712 nm12FinFETGlobalFoundries, Samsung3671000036710000
2017-tsmc-7-nm-finfetN7FF20177 nm7FinFETTSMC96500000101850000
2018-samsung-8-nm-finfet8LPP20188 nm8FinFETSamsung6118000061180000
2018-samsung-7-nm-finfet7LPE20187 nm7FinFETSamsung9530000095300000
2018-intel-10-nm-finfetIntel 10 nm201810 nm10FinFETIntel100760000106100000
2018-samsung-5-nm-finfet5LPE20185 nm5FinFETSamsung126530000134900000
2019-tsmc-7-nm-finfetN7FF+20197 nm7FinFETTSMC113900000113900000
2019-tsmc-5-nm-finfetCLN5FF20195 nm5FinFETTSMC171300000185460000
2021-intel-7-nm-finfetIntel 720217 nm7FinFETIntel100760000106100000
2021-samsung-4-nm-finfet4LPE20214 nm4FinFETSamsung145700000145700000
2021-tsmc-4-nm-finfetN420214 nm4FinFETTSMC196600000196600000
2022-tsmc-4-nm-finfetN4P20224 nm4FinFETTSMC196600000196600000
2022-samsung-3-nm-mbcfet3GAE20223 nm3MBCFETSamsung202850000202850000
2022-tsmc-3-nm-finfetN320223 nm3FinFETTSMC314730000314730000
2023-tsmc-4-nm-finfetN4X20234 nm4FinFETTSMC
2023-tsmc-3-nm-finfetN3E20233 nm3FinFETTSMC
2023-samsung-3-nm-mbcfet3GAP20233 nm3MBCFETSamsung
2023-intel-4-nm-finfetIntel 420234 nm4FinFETIntel160000000160000000
2023-intel-3-nm-finfetIntel 320233 nm3FinFETIntel
2024-intel-2-nm-ribbonfetIntel 20A20242 nm2RibbonFETIntel
2025-intel-sub-2-nm-ribbonfetIntel 18A2025sub-2 nmRibbonFETIntel238000000238000000
2025-samsung-2-nm-mbcfet2GAP20252 nm2MBCFETSamsung
2025-tsmc-2-nm-gaafetN220252 nm2GAAFETTSMC